Generate the discharge
The plasma is established at low pressure before the surface of the sample.
Direct analysis of solid materials
Analysis of Materials by Glow Discharge
From the rapid characterization of alloys and coatings to the determination of impurities at ultratrace levels: two complementary routes to reveal composition, purity and distribution of elements in depth.
Direct analysisLess preparation steps
Layer by layerDepth profiles
From matrix to ppbAdditional analytical routes
GD-Profiler 2HORIBA · GD-OES
ELEMENT GD PlusThermo Scientific · GD-MS
GD-OES + GD-MSTwo complementary analytical routes
Common principle
How the luminescent discharge accesses solid
The sample is positioned in the source as cathode. At low pressure, the argon forms a plasma; its ions bombard a controlled surface area and release material by sputtering. The analytical information changes according to the detection route.
Schematic cutLuminescent discharge source
Argon · low pressureAir+ ionsAtoms Sample MArea analysed
01
The sample acts as the cell cathode
A defined surface area is exposed to the discharge gas without chemical dissolution of the solid.
02
The plasma drives sputtering
Air+ ions accelerate against the sample and remove atoms successively, forming a controlled crater.
03
The removed material generates the signal
Excited atoms emit light; ionized species can be extracted and separated according to mass.
OPTICAL-EMISSION ROUTEPhotons → GD-OESSimultaneous reading and quick composition profiles.
MASS-SPECTROMETRY ROUTEIons → GD-MSHigh resolution for traces, ultratraces and purity.
The depth profile is constructed by relating the signal to the erosion time. Conversion to depth can use sputtering rate calibration or direct measurement according to system and configuration.
Remove successive layers
Sputtering successively exposes coatings, interfaces and substrate.
Select the detection technique
OES for speed and profiles; MS for high purity, traces and ultratraces.
Objective orientation
Technology comparison
Select the analysis priority to view the initially most appropriate route. The final configuration depends on the matrix, sample geometry and analytical range.
Your priority
Analytical objective and matrix
The selection of the technique depends on the material and analytical objective.
ROAD RECOMMENDED
GD-OES · HORIBA GD-Profiler 2
To investigate composition, thickness, interfaces and diffusion in thin films or thick layers with simultaneous reading and high speed.
When considering GD-MS as wellWhen the same study requires trace and ultratrace concentrations or high purity materials.
Additional portfolio
Two technologies, different applications
The hub does not treat one technique as evolution of the other. Each system occupies a specific decision range within the characterization of materials.
HORIBAOES
OESGD-Profiler 2
GD-OES Pulsed-RF for rapid and simultaneous analysis of the elemental composition of the surface to bulk material.
✓Elemental profiles of thin films and thick layers.
✓Analysis of conductive, non-conductive and hybrid materials.
✓Spectral coverage for light elements including H, O, C, N and Cl.
✓Pulsed RF source suitable for fragile and heat sensitive materials.
✓DiP for direct measurement of depth and erosion rate during analysis.
120–800 nmSpectral Track
nm → µmLayer scale
SimultaneousOES detection
THERMO SCIENTIFICMS
MSELEMENT GD Plus
High resolution GD-MS for direct analysis of high purity solids and robust determination of traces and ultratraces.
✓Determination of many elements up to the ppb range or below, according to matrix and application.
✓Three fixed mass resolution modes to remove spectral interference.
✓Dynamic range exceeding 12 orders of magnitude, From matrix-level elements to ultratraces.
✓Fast-flow source with fast sample exchange and high throughput.
✓Bulk analysis and depth profile in advanced materials.
>10¹²Dynamic range
R 10.000High Resolution
up to 5/hSamples
Applications by material
From surface characterization to bulk purity
The route can change as per the goal. The same sector can use GD-OES for layers and GD-MS for impurities at very low levels.
Metals and alloys
Composition, superficial treatments, segregation, diffusion and process control.
GD-OES + GD-MSCoatings and layers
Thickness, interfaces, gradients and elemental distribution in depth.
GD-OES priorityHigh purity materials
Critical impurities in metals, special alloys and technological materials.
GD-MS prioritySemiconductors
Silicon, sputtering targets, wafers, functional layers and contaminants.
GD-OES + GD-MSBatteries and power
Electrodes, interfaces, active materials, diffusion and elemental impurities.
GD-OES + GD-MSAerospace
Nickel alloys, titanium, coatings and diffusion layers.
GD-OES + GD-MSPhotovoltaics and electronics
Fine films, solar cells, metal contacts and electronic materials.
GD-OES + GD-MSMaterials research
Development, failures, process comparison and advanced characterization.
As TargetTechnical comparison
GD-OES or GD-MS?
A practical view of the differences in positioning. Final values depend on the configuration, element and matrix analyzed.
| Criteria | GD-OES · GD-Profiler 2 | GD-MS · ELEMENT GD Plus |
|---|---|---|
| Main focus | Speed, composition and layer profiles | High purity, trace and ultratrace |
| Detection | Simultaneous optical emission | High resolution mass spectrometry |
| Typical range of interest | Of major constituents at low levels, according to element and matrix | From matrix to traces and ultratraces; many elements in ppb range |
| Depth profile | Well suited to routine analysis, thin films and multilayers | Available with high elemental sensitivity |
| Materials | Drivers, non-conductors and hybrids with pulsed RF source | Conductors and many non-conductors, as prepared and configured |
| throughput | Very high; simultaneous and fast analysis | High for GD-MS; up to 5 samples per hour in suitable applications |
| Spectral Interferences | Line selection and optical configuration | Three fixed resolutions for interference separation |
| Main application | “ How does the composition change from surface to substrate?” | “What impurities are there and at what level in the material? ” |
Glow Discharge analysis is localized and destructive: spraying forms a crater in the measured region. SENS evaluates sample, objective and requirements before defining the solution.
Technical library
Catalogs for download
Files embedded in this page. The download works without accessing external servers.
GD-Profiler 2 · HORIBA
Technical Catalogue · Pulsed-RF GD-OES and DiP
ELEMENT GD Plus · Thermo Scientific
Technical Catalogue · High resolution GD-MS
The documents are official materials of the respective manufacturers and have been incorporated for local consultation.
Frequently Asked Questions
The essentials before choosing
The decision begins with the matrix, expected concentration, sample geometry and information desired in depth.
What's the difference between GD-OES and GD-MS?
The GD-OES prioritizes speed, simultaneous analysis and elemental layer profiles. The high-resolution GD-MS prioritizes sensitivity, selectivity and quantification of traces and ultratraces in high purity materials.
Does Glow Discharge directly analyze the solid sample?
Yes. The surface is sprayed in a way controlled by a low pressure plasma. The material removed is analyzed by optical emission in the GD-OES or by mass spectrometry in the GD-MS.
Is it possible to get depth profile?
Yes. As the removal occurs layer by layer, the two techniques can accompany the elemental distribution in depth. Performance depends on the material, thickness and conditions of analysis.
Is the analysis destructive?
Yes. The process forms a crater located in the sample. Area and depth vary with system, geometry and analytical method.
Does SENS help to evaluate the sample?
Yes. The team evaluates matrix, format, analytical range, critical elements, throughput, and need for depth profiling to guide technology and configuration.
Glow Discharge technologies for different materials.
Tell SENS the matrix, analytical objective and expected concentration range.