Ultra-fast elemental profile
Typical erosion rates in the order of micrometers per minute allow monitoring processes, lots and multiple points of the sample.
Rapid elemental characterization of layered materials, with simultaneous optical emission, pulsed RF source and direct measurement of depth by differential interferometry.

The system combines fast sputtering, simultaneous optical detection and features dedicated to signal conversion into concentration and depth.
Typical erosion rates in the order of micrometers per minute allow monitoring processes, lots and multiple points of the sample.
Profiles with nanometric or subnanometric resolution in appropriate applications, extending to layers with more than 150 μm.
High dynamic optical detection to simultaneously monitor elements of interest throughout the profile.
The pulsed RF source expands the analysis for insulators, hybrid materials, polymers and heat sensitive samples.
DiP measures the depth and erosion rate in real time, simultaneously with the GD profile.
Optical coverage of VUV to IR for light element lines and relevant species in technological materials.
The source spatially separates erosion and emission, favoring a direct relationship between optical intensity and plasma concentration.
The surface is placed against the O-ring and before the source anode tube.
Low pressure argon plasma initiates controlled spraying.
The system simultaneously follows the lines of the elements over time.
Quantum processes concentration, thickness and interfaces; DiP can measure depth directly.
GD-Profiler 2 is especially useful when the question involves surface, coating, interface, gradient or substrate.
Positive and negative electrodes, thick layers and superficial interfaces, including strategies for air-sensitive samples.
Profiles in depth of nitrogen, carbon and other elements in steel and alloy treatments.
Control of processes, interfaces and multilayer structures with high resolution in depth.
Thickness, uniformity, composition, defects and interactions between coating and substrate.
Direct measurement of H and possibility to track H and D simultaneously in specific applications.
Functional films, solar cells, contacts, transparent layers and process development.
Rapid profiles in polymer layers, insulating and organic-inorganic combinations.
Multilayers, gradients, oxides, functional surfaces and diffusion studies and failures.
The architecture was designed to maintain speed, depth resolution and flexibility of materials on the same platform.
See full catalogueSummarized data from the official Horiba catalogue. Performance depends on optical configuration, anode, material, calibration and analysis conditions.
The matrix, geometry, expected concentration and desired type of information determine the required method and accessories.
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Official technical catalogue HORIBA with principle, performance, applications, source, optics, software and accessories.
Information for initial application evaluation.
Yes. The pulsed RF source allows working with conductive and non-conductive materials, as well as hybrid structures, according to geometry and method.
With the DiP feature, differential interferometry measures depth and erosion rate simultaneously with GD analysis. Without DiP, conversion can use erosion rate calibration.
The catalog positions the system from the first nanometer to more than 150 micrometers, depending on the material, layer, anode and analytical conditions.
Yes. The discharge sprays a localized area and produces a crater in the sample.
Yes. The optional Sample Mapping Unit can automate measurements at different points or in a batch of compatible samples.
Send SENS the expected composition, layer type, thickness and geometry available for analysis.